creat by art ? glass passivated junction chip ? for surface mounted application ? low profile package ? built-in strain rellef ? ideal for automated placement ? easy pick and place ? super fast recovery time for high efficiency ? qualified as per aec-q101 esh1x = specific device code g = green compound y = year m = work month maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% symbol unit v rrm v v rms v v dc v i f(av) a trr ns cj pf t j o c t stg o c ? terminals: pure tin plated, lead free mechanical data ua maximum rms voltage 150 105 features ? high temperature soldering: 260 /10 seconds at terminals ? case: molded plastic ? weight: 0.064 grams type number maximum average forward rectified current ? polarity: indicated by cathode band ? packing: 12mm tape per eia std rs-481 esh1b - esh1d 1.0amp surface mount super fast rectifiers marking diagram sma/do-214ac dimensions in inches and (millimeters) note 1: pulse test with pw=300 usec, 1% duty cycle operating temperature range storage temperature range - 55 to + 175 version:a11 - 55 to + 175 typical junction capacitance (note 3) note 2: reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a typical thermal resistance r ja r jl 85 35 o c/w note 3: measured at 1 mhz and applied reverse voltage of 4.0v d.c. ? plastic material used carries underwriters laboratory classification 94v-0 ? green compound with suffix "g" on packing code & prefix "g" on datecode 150 maximum reverse current @ rated vr t a =25 t a =125 i r 1 25 maximum instantaneous forward voltage (note 1) @ 1.0a v f 0.95 70 maximum reverse recovery time (note 2) 16 15 maximum repetitive peak reverse voltage esh1b ESH1C esh1d 100 peak forward surge current, 8.3 ms single half sine- wave superimposed on rated load i fsm a maximum dc blocking voltage 100 30 1.0 v 200 140 200 pb rohs compliance rohs compliance
version:a11 ratings and characteristic curves (esh1b thru esh1d) fig.1 forward current derating curve 0 0.2 0.4 0.6 0.8 1 1.2 75 85 95 105 115 125 135 145 155 165 175 lead temperature ( o c) average forward current (a) resister or inductive load fig. 2 maximum non-repetitive forward surge current 0 5 10 15 20 25 30 1 10 100 number of cycles at 60 hz peak forward surge a current (a) 8.3ms single half sine wave jedec method fig. 4 typical reverse characteristics 0.1 1 10 100 1000 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) instantaneous reverse current (ua) ta=25 ta=125 ta=75 fig. 5 typical junction capacitance 1 10 100 0.1 1 10 100 reverse voltage (v) capacitance (pf) fig. 3 typical forward characterisrics 0.01 0.1 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 forward voltage (v) instantaneous forward current (a) ta=25 pulse width=300us 1% duty cycle
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